Accession Number : ADA181185

Title :   Vibrational, Mechanical, and Thermal Properties of III-V Semiconductors.

Descriptive Note : Annual technical rept. 15 Aug 85-14 Aug 86,

Corporate Author : NOTRE DAME UNIV IN DEPT OF PHYSICS

Personal Author(s) : Dow,John D

PDF Url : ADA181185

Report Date : 20 Apr 1987

Pagination or Media Count : 67

Abstract : We have pursued three major lines of investigation this year: (1) development of theoretical methods for prediction the relaxation of atoms at III-V surfaces, (2) prediction of the vibrational spectra of random III0V and Hg(1-x)Cd(x)Te alloys, and (3) development of a theory of Raman scattering in correlated and clustered alloys. Among other predictions, we have shown that (1) The reconstruction of (110) zincblende surfaces is inhibited by ionic forces, and so the 29 deg surface anion relaxation angle of GaAs, which was thought to be common to all zincblende (110) surfaces, decreases significantly with increasing ionicity of the semiconductor. (2) Wurtzite (1010) surfaces, to a reasonable approximation, do not reconstruct. (3) The 'clustering mode' observed in Hg(1-x)Cd(x)Te Raman spectra is due to Te atoms surrounded by three Hg atoms and one Dc atom, not to vacancy complexes. (4) The effects of correlations and clustering in the Raman spectra of alloys can be easily predicted using a theory which combines Ising-Monte Carlo techniques and the recursion method. (Author)

Descriptors :   *SEMICONDUCTORS, ALLOYS, ATOMS, CLUSTERING, CORRELATION, DIRECT CURRENT, GROUP III COMPOUNDS, GROUP V COMPOUNDS, LIGHT SCATTERING, METHODOLOGY, RAMAN SPECTRA, RECURSIVE FUNCTIONS, SURFACES, THEORY, THERMAL PROPERTIES, VIBRATIONAL SPECTRA, ZINC SULFIDES

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE