Accession Number : ADA181194
Title : Single Crystal Films of Semiconductors on Amorphous Substrates Via a Low Temperature Graphoepitaxy.
Descriptive Note : Annual technical rept. 1 Mar 86-28 Feb 87,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
Personal Author(s) : Smith,Henry I ; Thompson,Carl V
PDF Url : ADA181194
Report Date : Apr 1987
Pagination or Media Count : 23
Abstract : The objective of this program is to carry out basic research on the phenomenon of surface-energy-driven secondary grain growth (SEDSGG) in thin films on amorphous and single crystal substrates. Means of enhancing grain boundary mobility, such as ion bombardment, doping, and rapid thermal annealing are investigated, Theoretical models for SEDSGG are developed. The role of surface patterning in SEDSGG is also studied.
Descriptors : *SEMICONDUCTORS, *SINGLE CRYSTALS, AMORPHOUS MATERIALS, ANNEALING, DOPING, FILMS, GRAIN BOUNDARIES, ION BOMBARDMENT, MOBILITY, SUBSTRATES, SURFACES, THERMAL RADIATION, THIN FILMS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE