Accession Number : ADA181194

Title :   Single Crystal Films of Semiconductors on Amorphous Substrates Via a Low Temperature Graphoepitaxy.

Descriptive Note : Annual technical rept. 1 Mar 86-28 Feb 87,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS

Personal Author(s) : Smith,Henry I ; Thompson,Carl V

PDF Url : ADA181194

Report Date : Apr 1987

Pagination or Media Count : 23

Abstract : The objective of this program is to carry out basic research on the phenomenon of surface-energy-driven secondary grain growth (SEDSGG) in thin films on amorphous and single crystal substrates. Means of enhancing grain boundary mobility, such as ion bombardment, doping, and rapid thermal annealing are investigated, Theoretical models for SEDSGG are developed. The role of surface patterning in SEDSGG is also studied.

Descriptors :   *SEMICONDUCTORS, *SINGLE CRYSTALS, AMORPHOUS MATERIALS, ANNEALING, DOPING, FILMS, GRAIN BOUNDARIES, ION BOMBARDMENT, MOBILITY, SUBSTRATES, SURFACES, THERMAL RADIATION, THIN FILMS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE