Accession Number : ADA181214

Title :   Gas Source MBE (Molecular Beam Epitaxy).

Descriptive Note : Interim rept.,

Corporate Author : COLORADO STATE UNIV FORT COLLINS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Robinson,Gary L

PDF Url : ADA181214

Report Date : Mar 1987

Pagination or Media Count : 4

Abstract : The objective of the research supported by the grant to grow epitaxial III-V semiconductor films using gaseous source materials for molecular beam epitaxy (MBE). The grant provides the critical equipment items needed to customize an existing commercial MBE system and allow growth of heteroepitaxial structures that can not be fabricated by other existing techniques.

Descriptors :   *EPITAXIAL GROWTH, *MOLECULAR BEAMS, CRITICAL ASSEMBLIES, GASES, GROUP III COMPOUNDS, GROUP V COMPOUNDS, SEMICONDUCTING FILMS, SOURCES, GROWTH(GENERAL), STRUCTURES

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE