Accession Number : ADA181219

Title :   Investigation of a New Concept in Semiconductor Microwave Oscillators.

Descriptive Note : Annual rept. 1 May 86-22 May 87,

Corporate Author : PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Cooper,James A , Jr

PDF Url : ADA181219

Report Date : 31 May 1987

Pagination or Media Count : 25

Abstract : The goal of this project is to demonstrate the operation of a new millimeter wave source called a 'contiguous'. This device uses the transferred electron effect in GaAs to form contiguous charge domains in the channel of a resistive gate MESFET or MODFET. The resulting drain current exhibits microwave oscillations in the range from a few GHz to a few hundred GHz. The oscillation is not based on a transit time effect, and as a result the frequency can be tuned over a broad band during operation by adjusting the gate-to-source voltage. During the past year we fabricated eight wafers of MESFET-type oscillator devices. Of the six wafers that reached the end of the process, four produced devices which were functional at DC test. The most recent wafer contained thirty six working devices. We have acquired equipment to conduct microwave measurements up to 90 GHz, which should be satisfactory for initial testing. During the next few months we expect to perform the microwave characterization which will verify the contiguous domain concept.

Descriptors :   *MICROWAVE OSCILLATORS, *SEMICONDUCTORS, BROADBAND, DIRECT CURRENT, MICROWAVES, OSCILLATION, OPERATION, SETTING(ADJUSTING), ELECTRON TRANSFER, DRAINAGE, MEASUREMENT, MILLIMETER WAVES, SOURCES, TIME

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE