Accession Number : ADA181329

Title :   Models for the Oxidation of Silicon.

Descriptive Note : Technical rept.,

Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s) : Irene,Eugene A

PDF Url : ADA181329

Report Date : 03 Jun 1987

Pagination or Media Count : 113

Abstract : This review includes first, a technological overview to define the silicon oxidation problem and the electronic implications; and then a historical perspective which includes a review of the current status of the experimental studies on silicon oxidation; and lastly a critical treatment of the latest oxidation models. It is this authors intent to utilize the Technological Overview and Historical Perspective sections of this review to provide the reader with sufficient information and background to be able to fully appreciate the basis for the currently proposed silicon oxidation models. The origins and reasoning for many of the newest models lie with facts uncovered fifteen years ago. A brief development of some of these facts is given with references. It should be mentioned that all models chosen for discussion have some merit based either on a specific experiment finding or by analogy with other oxidation systems.

Descriptors :   *MODELS, *OXIDATION, *SILICON, *SEMICONDUCTORS, REASONING, CARRIER MOBILITY, MICROELECTRONICS, MICROSTRUCTURE, DOPING, SURFACE PROPERTIES, CHEMICAL PROPERTIES, SINGLE CRYSTALS, SILICON DIOXIDE, THIN FILMS

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE