Accession Number : ADA181342

Title :   Micro-Raman Analysis of Dielectric Thin Films.

Descriptive Note : Annual rept. 1 May 85-30 Apr 86,

Corporate Author : ROCHESTER UNIV N Y LAB FOR LASER ENERGETICS

Personal Author(s) : Schmid,A.

Report Date : APR 1987

Pagination or Media Count : 14

Abstract : The long-term motivation of our program Micro-Raman-Analysis of Dielectric Thin Films is the acquisition of an understanding of stress and the role of defects in the growth of optical performance of defects in the growth and optical performance of dielectric thin films. By dielectric films we mearn films comprising materials that are suitable for high-power laser applications in the visible and near UN. Materials with intrinsic band gaps exceeding 3.5 eV are of interest here. Before the initiation of this program there was considerable research activity in the area of narrow band gap materials, mostly semiconductors, in which Raman spectroscopy answered questions of film morphology, doping levels and carrier dynamics.

Descriptors :   *DIELECTRIC FILMS, *LASER APPLICATIONS, *RAMAN SPECTROSCOPY, DEFECTS(MATERIALS), DOPING, DYNAMICS, FILMS, HIGH POWER, LEVEL(QUANTITY), LONG RANGE(TIME), MATERIALS, MORPHOLOGY, MOTIVATION, OPTICAL PROPERTIES, THIN FILMS, STRESS ANALYSIS, NARROW GAP SEMICONDUCTORS, CHARGE CARRIERS

Subject Categories : Electricity and Magnetism
      Electrooptical and Optoelectronic Devices
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE