Accession Number : ADA181452
Title : Avalanching in Single-Event-Upset Charge Collection in Semiconductor Diodes.
Descriptive Note : Final rept. Oct 85-Jun 86,
Corporate Author : HARRY DIAMOND LABS ADELPHI MD
Personal Author(s) : Ward,Alford L
PDF Url : ADA181452
Report Date : Feb 1987
Pagination or Media Count : 24
Abstract : The one-dimensional computer program DIODE has been used to calculate charge collection in single ionizing events in silicon and gallium arsenide diodes. Avalanche multiplication is calculated to occur above a threshold of 3 V in a silicon diode, in agreement with published measurements. Since avalanching may lead to burnout in very-large-integration semiconductors, it is a greater danger than the funneling effect of space charge. Carrier recombination is found to be important in gallium arsenide. Keywords: Avalanche; Single-event upset; CHarge collection; Semiconductor; Silicon; Gallium arsenide; and Carrier recombination.
Descriptors : *AVALANCHE EFFECT(ELECTRONICS), *SEMICONDUCTOR DIODES, GALLIUM ARSENIDES, COMPUTER PROGRAMS, DIODES, ONE DIMENSIONAL, SILICON, IONIZATION, BURNOUT, CHARGE CARRIERS, RECOMBINATION REACTIONS, SOLID STATE ELECTRONICS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE