Accession Number : ADA181452

Title :   Avalanching in Single-Event-Upset Charge Collection in Semiconductor Diodes.

Descriptive Note : Final rept. Oct 85-Jun 86,

Corporate Author : HARRY DIAMOND LABS ADELPHI MD

Personal Author(s) : Ward,Alford L

PDF Url : ADA181452

Report Date : Feb 1987

Pagination or Media Count : 24

Abstract : The one-dimensional computer program DIODE has been used to calculate charge collection in single ionizing events in silicon and gallium arsenide diodes. Avalanche multiplication is calculated to occur above a threshold of 3 V in a silicon diode, in agreement with published measurements. Since avalanching may lead to burnout in very-large-integration semiconductors, it is a greater danger than the funneling effect of space charge. Carrier recombination is found to be important in gallium arsenide. Keywords: Avalanche; Single-event upset; CHarge collection; Semiconductor; Silicon; Gallium arsenide; and Carrier recombination.

Descriptors :   *AVALANCHE EFFECT(ELECTRONICS), *SEMICONDUCTOR DIODES, GALLIUM ARSENIDES, COMPUTER PROGRAMS, DIODES, ONE DIMENSIONAL, SILICON, IONIZATION, BURNOUT, CHARGE CARRIERS, RECOMBINATION REACTIONS, SOLID STATE ELECTRONICS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE