Accession Number : ADA181463
Title : Ultrafast Processes and Spectroscopy with Free Electron Lasers.
Descriptive Note : Annual rept. 1 Jun 86-31 May 87,
Corporate Author : PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
Personal Author(s) : Fauchet,Philippe M
PDF Url : ADA181463
Report Date : May 1987
Pagination or Media Count : 17
Abstract : Our goal is to demonstrate the power of FEL's in standard picosecond and femtosecond spectroscopy by performing time-resolved reflectivity or transmission, and wave mixing experiments in semiconductors. Of special interest to us are the carrier relaxation and trapping times in amorphous semiconductors. We report progress on three fronts. First, we have established a permanent laboratory at Stanford University, where we have assembled the necessary equipment. Second, we have developed a novel method to measure accurately and over an extremely wide frequency range the duration and coherence properties of ultrashort laser pulses. This technique has been demonstrated and analyzed successfully at Princeton and appears ideally suited to the characterization of FEL's. Third, results from our recent femtosecond optical spectroscopy studies of amorphous silicon have helped us refine our experimental goals in this program, which will be discussed. Keywords: Free electron laser, time resolved, picosecond, femtosecond, spectroscopy; amorphous, semiconductors.
Descriptors : *FREE ELECTRON LASERS, AMORPHOUS MATERIALS, SEMICONDUCTORS, RELAXATION, BROADBAND, FREQUENCY, RANGE(EXTREMES), SPECTROSCOPY, HIGH RATE, SILICON, COHERENCE, REFLECTIVITY, TIME, PULSED LASERS, SHORT PULSES, TIME STUDIES, TIME DOMAIN
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE