Accession Number : ADA181470
Title : A Thermionic Emission Model for the Initial Regime of Silicon Oxidation.
Descriptive Note : Interim technical rept.,
Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
Personal Author(s) : Irene,Eugene A ; Lewis,E A
PDF Url : ADA181470
Report Date : 03 Jun 1987
Pagination or Media Count : 19
Abstract : The very early stage of the thermal oxidation of single crystal Si has been the subject of continual study for the last two decades. In the light of very recent experimental oxidation data on the initial regime, we report that a simple thermionic electron flux from silicon into silicon dioxide closely agrees with the SiO2 film growth rate. The importance of electrons for the oxidation kinetics has also been attested to in several recent experimental studies. Thus a consistent model is presented for the initial oxidation regime based on the electron flux as the rate limiting step.
Descriptors : *OXIDATION, *SILICON, *THERMIONIC EMISSION, CONSISTENCY, ELECTRON FLUX, ELECTRONS, KINETICS, MODELS, SILICON DIOXIDE, SINGLE CRYSTALS, THERMOCHEMISTRY
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE