Accession Number : ADA181472
Title : Thermal Oxidation of Silicon: New Experimental Results and Models.
Descriptive Note : Interim technical rept.,
Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
Personal Author(s) : Irene,Eugene A ; Ghez,R
PDF Url : ADA181472
Report Date : 03 Jun 1987
Pagination or Media Count : 36
Abstract : Most studies of Silicon oxidation commence with a discussion of the Linear-Parabolic oxidation model developed by a number of workers in the 1960's. The limits of the model are pure diffusion of oxidant for thick Silicon dioxide films and a surface reaction limitation for thin films. The steady state picture of this series reaction scheme is discussed and used to explain new experimental results. New data relevant to Si oxidation is presented on the following subjects: five orientations of Si; photonic excitement; intrinsic film stress; silicide oxidation. The role of electrons on the oxidation kinetics is elucidated. A thermionic emission model for th initial stages of oxidation is proposed.
Descriptors : *OXIDATION, *SILICON, *THERMOCHEMISTRY, DIFFUSION, ELECTRONS, KINETICS, LIMITATIONS, MODELS, OXIDIZERS, PERSONNEL, PICTURES, PURITY, RESPONSE, SILICIDES, SILICON DIOXIDE, STEADY STATE, SURFACE REACTIONS, THERMIONIC EMISSION, THICK FILMS, THIN FILMS, TRANSPORT PROPERTIES, REACTION KINETICS, MATHEMATICAL ANALYSIS, CRYSTAL LATTICES, HIGH TEMPERATURE, PHOTOCHEMICAL REACTIONS
Subject Categories : Physical Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE