Accession Number : ADA181644

Title :   Flowing Afterglow Vapor Deposition for Microelectric Applications.

Descriptive Note : Final rept Jan 85-Apr 87,

Corporate Author : WAYNE STATE UNIV DETROIT MI DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Buchanan,Drew

PDF Url : ADA181644

Report Date : 28 Apr 1987

Pagination or Media Count : 42

Abstract : The construction of a novel type of plasma assisted chemical vapor deposition device for microelectronic applications has been completed. The machine is based on a flowing afterglow system in which the source generation plasma is physically decoupled from the deposition substrate. Because of the high gas throughout the machine can operate not only as a novel plasma assisted CVD region system, but as a physical deposition device as well. The combination of physical deposition capabilities, versatile plasma capabilities, and nor CVD capabilities, suggests unusual flexibility in the production of high quality insulating films for indium phosphide based microelectronic structures. The achievement of high quality insulating layers on indium phosphide substrates could lead to the development of indium phosphide based metal-insulator-semiconductor (MIS) devices. The MIS structure might eventually be utilized for very high speed VLSI applications. The devices should be able to achieve operating speeds in the 100GHZ regions and beyond. Initial efforts have thus far proved unsuccessful in obtaining high quality films, although the system the system still shows promise for circumventing the limitation of other deposition techniques.

Descriptors :   *INDIUM PHOSPHIDES, *MICROELECTRONICS, *PLASMAS(PHYSICS), DEPOSITION, FILMS, SUBSTRATES, PHOSPHIDES, STRUCTURES, PHYSICAL PROPERTIES, GASES, INSULATION, ELECTRICAL INSULATION, METAL CONTACTS, SEMICONDUCTORS, PHYSICAL PROPERTIES, PRODUCTION, SUBSTRATES, SOURCES, HIGH VELOCITY

Subject Categories : Plasma Physics and Magnetohydrodynamics
      Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE