Accession Number : ADA181721

Title :   Two-Dimensional Thermal Oxidation of Silicon. 1. Experiments,

Corporate Author : STANFORD UNIV CA INTEGRATED CIRCUITS LAB

Personal Author(s) : Kao,D B ; McVittie,J P ; Nix,W D ; Saraswat,K C

PDF Url : ADA181721

Report Date : Jan 1979

Pagination or Media Count : 35

Abstract : This paper introduces a unique experimental approach in which extensive data were obtained concerning the oxidation of cylindrical silicon structures of controlled radii of curvature. It is quantitatively demonstrated that the oxidation of curved silicon surfaces is retarded at low temperatures and sharp curvatures, and that the retardation is more severe on concave than convex structures. These observations will be interpreted using a physical model based on stress effects on oxide growth parameters. The paper begins with a brief review of two-dimensional oxidation phenomena. Experimental procedures are then described in detail. The experimental results as characterized by surface curvature, oxide growth rate and viscosity will provide useful design guidelines. A theoretical model is developed in a separate paper based on the premise that the viscous normal to the silicon surface is responsible for the retarded oxide growth and that the stress in the bulk of the oxide accounts for the difference between concave and convex structures.

Descriptors :   *SILICON, *OXIDATION, CONTROL, CONVEX BODIES, CURVATURE, CYLINDRICAL BODIES, GROWTH(GENERAL), LOW TEMPERATURE, MODELS, OXIDES, RADIUS(MEASURE), RATES, RETARDATION, SHARPNESS, STRESSES, SURFACES, THEORY, THERMOCHEMISTRY, TWO DIMENSIONAL, SEMICONDUCTORS, LASER BEAMS, VISCOSITY, SURFACE PROPERTIES, NUMERICAL ANALYSIS, GATES(CIRCUITS), NITRIDING, ELASTIC PROPERTIES, VISCOELASTICITY, MICROPHOTOGRAPHY

Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE