Accession Number : ADA182334
Title : Electrical Characterization of VLSI RAMs and PROMs.
Descriptive Note : Final rept. May 84-May 86,
Corporate Author : IBM FEDERAL SYSTEMS DIV MANASSAS VA
Personal Author(s) : Barr,T. ; Hoang,T. ; Moyers,R. ; Pfeiffer,P. ; Scott,T.
Report Date : FEB 1987
Pagination or Media Count : 245
Abstract : Electrical characterizations were performed on 256K and 1M dynamic RAMS, 64K static RAMs, 64K PROMs, and 64KEE PROMs available from the merchant semiconductor industry. Based on the data obtained on the DRAMs, SRAMs and PROMs, parameter limits were established and proposed for the draft MIL-M-38510/XXX specifications. Also, based on the data obtained on the EEPROMs, parameter limits were established and a recommended test methodology was proposed. Gate array status and recommendations were also made. The data, proposed limits and test methodologies and the related discussions are presented.
Descriptors : *INTEGRATED CIRCUITS, *MEMORY DEVICES, READ ONLY MEMORIES, GATES(CIRCUITS), ARRAYS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE