Accession Number : ADA182437
Title : Studies of Boron Implantation through Photochemically Deposited SiO2 Films on Hg1-xCdxTe.
Descriptive Note : Technical rept.,
Corporate Author : AEROSPACE CORP EL SEGUNDO CA CHEMISTRY AND PHYSICS LAB
Personal Author(s) : Bowman,Robert C , Jr ; Robertson,Ruby E ; Knudsen,John F ; Downing,R G
PDF Url : ADA182437
Report Date : 22 May 1987
Pagination or Media Count : 23
Abstract : Variable temperature Hall and resistivity measurements have been used to monitor the changes in carrier behavior in p-type Hg1-xCdxTe when boron ions are implanted through photochemically deposited SiO2. The formation of an n-type layer is demonstrated. Quantitative and non-destructive determination of the absolute 10B concentration and distribution have been obtained by the novel method of neutron depth profiling. As expected, the boron distributions in the SiO2 films and Hg1-xCdxTe are strongly dependent upon the ion implant energy. However, negligible changes in the boron depth profiles were found after 200 C anneals. The present results are briefly related to the performance behavior of mid-wavelength infrared (MWIR) sensors produced via generic ion implantation procedures. Keywords: Mercury cadmium tellurides, Ion implantation effects, Silicon dioxide, Passivation, Neutron depth profiling, Infrared materials, Analysis.
Descriptors : *CADMIUM TELLURIDES, *N TYPE SEMICONDUCTORS, *SILICON DIOXIDE, BORON, DEPTH, PROFILES, IONS, INFRARED OPTICAL MATERIALS, ION IMPLANTATION, LAYERS, BEHAVIOR, DISTRIBUTION, ENERGY, NEUTRONS, PROFILES, PASSIVITY, DETERMINATION, MEASUREMENT, RESISTANCE, HALL EFFECT, TEMPERATURE, VARIABLES, NONDESTRUCTIVE TESTING, DETECTORS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE