Accession Number : ADA182486

Title :   In-Situ MOS Gate Engineering in a Novel Rapid Thermal/Plasma Multiprocessing Reactor,

Corporate Author : STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS

Personal Author(s) : Moslehi,Mehrdad M ; Wong,Man ; Saraswat,Krishna C ; Shatas,Steven C

PDF Url : ADA182486

Report Date : 23 Jan 1987

Pagination or Media Count : 5

Abstract : Low temperatures and short times are essential requirements of future VLSI presenting and the use of plasma in conjunction with single-wafer lamp heating is a major step to realize this goal. In-situ multiprocessing reduces contamination and enhances yield. Reproducible growth of thin oxides in hot-wall furnaces is difficult due to long transient times and constant furnace temperatures. Since furnaces are not designed for single-wafer processing, no extensive in-situ real-time measurements can be performed. RTP of Si in O2 and NH3 ambients is an attractive technique for the growth of silicon nitride, silicon dioxide, nitrided oxides, oxidized nitrides, and application-specific insulators. The feasibility of low temperature nitridation of Si nitrogen plasma generated by microwave discharge is demonstrated. LPCVD of tungsten (W) has emerged as a viable technology for VLSI. The conventional hot wall furnaces are not suitable for reproducible high rate W deposition and nonselective formation of W on insulators.

Descriptors :   *METAL OXIDE SEMICONDUCTORS, *CRYSTAL GROWTH, CONTAMINATION, GROWTH(GENERAL), SILICON NITRIDES, ENGINEERING, GATES(CIRCUITS), MEASUREMENT, REAL TIME, LOW TEMPERATURE, NITRIDES, MICROWAVES, FURNACES, WALLS, INSULATION, TRANSIENTS, NITROGEN, PLASMAS(PHYSICS), FABRICATION, MULTIPLE OPERATION, REPRODUCIBILITY, SILICON DIOXIDE, OXIDES, THIN FILMS, SHORT RANGE(TIME), WAFERS, TUNGSTEN

Subject Categories : Crystallography
      Solid State Physics
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE