Accession Number : ADA182575

Title :   Analysis of Solid State Plasma Formation in Semiconductor Components.

Descriptive Note : Final rept. Dec 83-May 85,

Corporate Author : AIR FORCE WEAPONS LAB KIRTLAND AFB NM

Personal Author(s) : Snyder,Mark ; Volkin,Howard

PDF Url : ADA182575

Report Date : Mar 1986

Pagination or Media Count : 92

Abstract : A study is performed to determine the physical mechanism responsible for the destruction of semiconductor components exposed to intense optical or electric fields. This paper suggests that solid state plasma formation is the responsible mechanism. Proof is provided via theoretical analysis and experimental data to show solid state plasma formation comes about due to the quantum mechanical aspects of semiconductors. To capitalize on this thesis, work began to construct an ensemble Monte Carlo program to model plasma effects under intense optical or electrical illumination in four semiconductor materials. Keywords: Solid state plasma; Failure mechanisms; Semiconductor.

Descriptors :   *SEMICONDUCTOR DEVICES, *PLASMAS(PHYSICS), *BREAKDOWN(ELECTRONIC THRESHOLD), *FAILURE(ELECTRONICS), *SOLID STATE PHYSICS, EXPOSURE(GENERAL), EXPERIMENTAL DATA, MODELS, THEORY, DESTRUCTION, MONTE CARLO METHOD, PHYSICAL PROPERTIES, SEMICONDUCTORS

Subject Categories : Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE