Accession Number : ADA182575
Title : Analysis of Solid State Plasma Formation in Semiconductor Components.
Descriptive Note : Final rept. Dec 83-May 85,
Corporate Author : AIR FORCE WEAPONS LAB KIRTLAND AFB NM
Personal Author(s) : Snyder,Mark ; Volkin,Howard
PDF Url : ADA182575
Report Date : Mar 1986
Pagination or Media Count : 92
Abstract : A study is performed to determine the physical mechanism responsible for the destruction of semiconductor components exposed to intense optical or electric fields. This paper suggests that solid state plasma formation is the responsible mechanism. Proof is provided via theoretical analysis and experimental data to show solid state plasma formation comes about due to the quantum mechanical aspects of semiconductors. To capitalize on this thesis, work began to construct an ensemble Monte Carlo program to model plasma effects under intense optical or electrical illumination in four semiconductor materials. Keywords: Solid state plasma; Failure mechanisms; Semiconductor.
Descriptors : *SEMICONDUCTOR DEVICES, *PLASMAS(PHYSICS), *BREAKDOWN(ELECTRONIC THRESHOLD), *FAILURE(ELECTRONICS), *SOLID STATE PHYSICS, EXPOSURE(GENERAL), EXPERIMENTAL DATA, MODELS, THEORY, DESTRUCTION, MONTE CARLO METHOD, PHYSICAL PROPERTIES, SEMICONDUCTORS
Subject Categories : Electricity and Magnetism
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE