Accession Number : ADA182705
Title : The Growth of Gallium Nitride Films Via the Innovative Technique of Atomic Layer Epitaxy.
Descriptive Note : Annual progress rept. 1 Jun 86-31 May 87,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Davis,Robert F ; Carter,Calvin H , Jr ; Paisley,Michael J ; Mack,Susan A
PDF Url : ADA182705
Report Date : 01 Jun 1987
Pagination or Media Count : 30
Abstract : This contract involves investigating the efficacy of atomic layer an molecular beam epitaxy techniques for the growth of Gallium Nitride (a wide direct bandgap semiconductor). During this reporting period the Atomic Layer Epitaxy Molecular Beam Epitaxy apparatus was designed and will be ready for construction in mid-July. An interim rf discharge nitrogen source was designed, constructed and used for initial growth experiments. A microwave power supply and resonance cavity have been ordered because recently acquired information indicates this may produce more reactive nitrogen. Keywords: Gallium Nitride film, Atomic layer epitaxy, Semiconductors.
Descriptors : *GALLIUM COMPOUNDS, *NITRIDES, *EPITAXIAL GROWTH, *SEMICONDUCTING FILMS, FILMS, MICROWAVES, RADIOFREQUENCY POWER, NITROGEN, REACTIVITIES, RADIOFREQUENCY GENERATORS, GROWTH(GENERAL), MOLECULAR BEAMS, CAVITIES, RESONANCE, SEMICONDUCTORS, SILICON CARBIDES, SILICON DIOXIDE, OUTGASSING, ETCHING, INDIUM, IMPEDANCE MATCHING, ION SOURCES, ION BEAMS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE