Accession Number : ADA182718

Title :   Silicide/Si Interfaces in VLSI Structures.

Descriptive Note : Final technical rept. 1 May 84-30 Sep 86,

Corporate Author : CORNELL UNIV ITHACA NY

Personal Author(s) : Mayer, James W

PDF Url : ADA182718

Report Date : 15 Jun 1987

Pagination or Media Count : 17

Abstract : The objective of this program was to investigate Silicide Si interfaces using electron energy loss spectroscopy, electron micro-diffraction and electron induced x ray emission with fine-focussed electron beams. For silicide studies we used self-supporting lateral diffusion couples because thin samples are needed to minimize electron-beam and maximize spatial resolution. In Nickel silicide structures, high resolution measurements were made of composition, structure and interface width; the compositional width of the Nickel Silicide interface boundary is at most 10 nonometers. The successful application of these techniques allowed us to investigate other technologically important interfaces: amorphous alloys, Poly Silicon Silicon and Gallium/Arsenide Gallium/Indium/Arsenide interfaces. In the latter case, electron energy loss measurements using a scanning transmission electron microscope allowed identification of electronic states associated with a single misfit dislocation.

Descriptors :   *SILICIDES, *INTERFACES, *SILICON, *INTEGRATED CIRCUITS, *X RAY SPECTROSCOPY, ALLOYS, AMORPHOUS MATERIALS, ELECTRON ENERGY, LOSSES, MEASUREMENT, HIGH RESOLUTION, NICKEL, BOUNDARIES, ELECTRON MICROSCOPES, ELECTRON SPECTROSCOPY, ELECTRONIC STATES, WIDTH, NICKEL COMPOUNDS, ELECTRON MICROSCOPY, SINGLE CRYSTALS, METAL COATINGS, ANNEALING, DIFFUSION, COUPLERS, THIN FILMS, SCANNING, TRANSMITTANCE, RESOLUTION, SPATIAL DISTRIBUTION, SAMPLING, THINNESS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE