Accession Number : ADA182751
Title : Narrowband 10 GHz and 20 GHz GaAs FET Amplifiers in Coplanar Waveguide.
Descriptive Note : Master's thesis,
Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY
Personal Author(s) : Rainville,Peter J
PDF Url : ADA182751
Report Date : Oct 1986
Pagination or Media Count : 127
Abstract : Single-stage, narrowband 10 GHz and 20 GHz GaAs FET amplifiers using Coplanar Waveguide (CPW) distributed matching elements were built and tested. The amplifiers were constructed to closely model monolithic amplifiers on GaAs by mounting GaAs FET chips into an epsilon (r) = 13 substrate material, onto which the CPW matching elements were placed. A CPW test fixture was designed and a routine for de-embedding the s-parameters of FET chips mounted in CPW was developed and successfully used. The 10-GHz amplifiers had an average of 9 dB gain. Due to a de-embedding error none of the 20-GHz amplifiers provided positive gain at 20 GHz. A second de-embedding effort yielded s-parameters that were used to accurately predict the actual performance of the 20-GHz amplifier designs.
Descriptors : *CHIPS(ELECTRONICS), *FIELD EFFECT TRANSISTORS, *GALLIUM ARSENIDES, PLANAR STRUCTURES, WAVEGUIDES, MATCHING, GAIN, DISTRIBUTION, MATCHING, MOUNTS, TEST FIXTURES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE