Accession Number : ADA182819

Title :   Electron-Phonon Interaction in GaAs/AlGaAs Structures.

Descriptive Note : Rept. no. 3 (Final) 2 Dec 85-25 Dec 86,

Corporate Author : GEC HIRST RESEARCH CENTRE WEMBLY (ENGLAND)

Personal Author(s) : Wybourne,M N

PDF Url : ADA182819

Report Date : Dec 1986

Pagination or Media Count : 5

Abstract : This report summarises investigations into phonon scattering mechanisms at surfaces. Fast heat pulse measurements have shown that the stretching of heat pulses, in transit between a generator and detector, occurs in a damaged region below the heater film. The scattering responsible is most probably due to strain fields put into the material by the action of mechanically polishing the surface. The observed propagation, in which high energy phonons exhibit diffusive propagation whilst the low energy phonons are ballistic, is one manifestation of quasi diffusion. This type of propagation will play an important role in the study of superlattice systems by phonon techniques. Keywords: Electron phonon interaction; Phonon scattering; Semiconductor structures.

Descriptors :   *GALLIUM ARSENIDES, *ALUMINUM GALLIUM ARSENIDE, *HEAT TRANSFER, *PHONONS, *SCATTERING, ELECTRONS, INTERACTIONS, HEAT, MEASUREMENT, PULSES, LOW ENERGY, SEMICONDUCTORS, HIGH ENERGY, CRYSTAL LATTICES, SEMICONDUCTING FILMS, STRUCTURES, PROPAGATION

Subject Categories : Solid State Physics
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE