Accession Number : ADA183119
Title : Amphoteric Impurities in Gallium Arsenide.
Descriptive Note : Final rept. 1 Nov 82-31 Jul 86,
Corporate Author : ILLINOIS UNIV AT URBANA ENGINEERING RESEARCH CENTER FOR COMPOUND SEMICONDUCTOR MICROELECTRONICS
Personal Author(s) : Stillman,Gregory E.
Report Date : 22 JUN 1987
Pagination or Media Count : 172
Abstract : Gallium arsenide is already an important material for application in high frequency, low noise field effects transitors (FETs) and in optoelectronic devices, and future Gallium Arsenide (GaAs) high speed integrated circuits are expected to have a major impact on sophisticated high data rate electronic systems. In spite of the great effort that has been expended in developing high purity epitaxial and undoped semi insulating bulk material is has only recently been possible to identify the residual donors and acceptors present in high purity GaAs, and there are still several unanswered questions regarding these identifications. There was much speculation on the identification and source of the residual impurities in earlier work, but because of the lack of positive identification of the donor and acceptor species, and in some cases even the incorrect identification of the donor or acceptor species present, much of this early work is of little value.
Descriptors : *AMPHOTERIC, *IMPURITIES, *GALLIUM ARSENIDES, *SEMICONDUCTORS, ELECTRON ACCEPTORS, GALLIUM, HIGH FREQUENCY, INTEGRATED CIRCUITS, BULK MATERIALS, INSULATION, ELECTROOPTICS, HIGH RATE, PURITY, IDENTIFICATION, LOW NOISE, RESIDUALS, DOPING, N TYPE SEMICONDUCTORS, SILICON, EPITAXIAL GROWTH, P TYPE SEMICONDUCTORS, VAPOR DEPOSITION, GERMANIUM
Subject Categories : Solid State Physics
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE