Accession Number : ADA183912
Title : Laser Induced Chemical Vapor Deposition of Gallium Arsenide Films.
Descriptive Note : Annual rept. no. 1, Aug 86-Jul 87,
Corporate Author : SOUTHERN METHODIST UNIV DALLAS TEX DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Chu,Shirley S ; Chu,Ting L
PDF Url : ADA183912
Report Date : 20 Aug 1987
Pagination or Media Count : 60
Abstract : The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Major efforts have been directed to (1) the design and construction of a low pressure reaction chamber and control system, and (2) the laser induced deposition and characterization of epitaxial gallium aresenide films by computer controlled MOCVD. Gallium arsenide films have been deposited by the ArF laser-induced MOCVD over a wide range of process parameters. Device quality homoepitaxial GaAs films with specular mirror smooth surface have been obtained in the substrate temperature range of 425-500 C. Keywords: Excimer laser, Laser induced, Epitaxial growth, Doping concentration, Mobility, Gallium arsenides.
Descriptors : *EPITAXIAL GROWTH, *FILMS, *GALLIUM ARSENIDES, CHAMBERS, COMPUTERS, CONCENTRATION(CHEMISTRY), CONTROL SYSTEMS, DEPOSITION, DOPING, EXCIMERS, GROUP III COMPOUNDS, GROUP V COMPOUNDS, LASERS, LOW PRESSURE, LOW TEMPERATURE, MIRRORS, QUALITY, RANGE(EXTREMES), SEMICONDUCTING FILMS, SPECULAR REFLECTION, SUBSTRATES, SURFACES, TEMPERATURE
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE