Accession Number : ADA183924

Title :   Dual-Gate FET (Field Effect Transistor) Amplifier Switch. Task 1.

Descriptive Note : Final rept. 1 Jan 83-Dec 86,

Corporate Author : DAVID SARNOFF RESEARCH CENTER PRINCETON NJ

Personal Author(s) : Mawhinney, Daniel D

PDF Url : ADA183924

Report Date : 15 Feb 1987

Pagination or Media Count : 39

Abstract : A gallium-arsenide dual-gate field effect transistor amplifier-switch was designed and fabricated to provide an improved means for generating a high-speed microwave pulse from a CW source to simulate an actual radar pulse. Fast rise and fall time capabilities was demonstrated by the FET amplifier-switches which provided an on-off ratio of more than 50-dB. Descriptions of the FET amplifier-switches are provided along with specific test results over the 7 to 11 GHz frequency range.

Descriptors :   *SWITCHES, *RADAR PULSES, *FIELD EFFECT TRANSISTORS, GATES(CIRCUITS), AMPLIFIERS, DUAL CHANNEL, MICROWAVES, PULSES, RATIOS, TIME

Subject Categories : Electrical and Electronic Equipment
      Active & Passive Radar Detection & Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE