Accession Number : ADA184268

Title :   Measurement of the Electron Density and the Attachment Rate Coefficient in Silane/Helium Discharges.

Descriptive Note : Final Technical rept. 12 Jul 83-30 Mar 86,

Corporate Author : ILLINOIS UNIV AT URBANA GASEOUS ELECTRONICS LAB

Personal Author(s) : Fledderman,Charles B ; Beberman,J H ; Verdeyen,J T ; Hebner,G ; Overzet,L J

PDF Url : ADA184268

Report Date : Sep 1986

Pagination or Media Count : 84

Abstract : Discharge processing of semiconductor materials, either as an etch process step in microelectronic fabrication, or as a deposition scheme for solar cell or copier applications, has become indispensable in modern technology. This report is focussed on discharges used for such applications. The thesis by Fleddermann was a basic study of the attachment rate of electrons in discharges involving mixtures of silane and a rare gas as represented by helium. It was found that the primary attaching species was not the silane modecule but some daughter product created by the discharge. These results are indicative of the problems encountered in an attempt to model discharges in such gases: the rates for the radicals may be larger than that of the donor gases.

Descriptors :   *ELECTRONS, *HELIUM, *SILANES, SOLAR CELLS, ATTACHMENT, RATES, DEPOSITION, GASES, FABRICATION, MICROELECTRONICS, MODELS, MATERIALS, SEMICONDUCTORS, COEFFICIENTS, PROCESSING, ELECTRON DENSITY, ETCHING, MIXTURES, RARE GASES

Subject Categories : Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE