Accession Number : ADA184588

Title :   Excimer Laser-Assisted Deposition of GaAs, AlAs, and (Al,Ga)as from Lewis Acid-Base Adducts.

Descriptive Note : Interim technical rept. no. 1, Oct 86-Aug 87,

Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF CHEMICAL PHYSICS DEPT

Personal Author(s) : Zinck,J J ; Brewer,P D ; Jensen,J E ; Olson,G L ; Tutt,L W

PDF Url : ADA184588

Report Date : 12 Aug 1987

Pagination or Media Count : 10

Abstract : Laser-assisted deposition of GaAs, AL,As and (AL,Ga)As thin films on Ge100 substrates from trimethylgallium-trimethylarsenic and trimethylaluminum-trimethylarsenic Lewis acid-base adduct source materials is reported. A parametric study has been performed in which reactive gas pressure, substrate temperature, laser fluence, laser wavelength (248 nm or 193 nm), and orientation of the laser beam with respect to the substrate have been varied. In the case of irradiation parallel to the substrate, stoichiometric films of GaAs and (AL,Ga)As have been obtained. The data suggest that for irradiation perpendicular to the substrate a competition exists between desorption and photodeposition, which adversely affects film stoichiometry under the conditions studied.

Descriptors :   *THIN FILMS, *VAPOR DEPOSITION, *LASER APPLICATIONS, GALLIUM ARSENIDES, ALUMINUM ARSENIDES, EXCIMERS, ELECTRON ACCEPTORS, ELECTRON DONORS, GERMANIUM, SUBSTRATES, SEMICONDUCTING FILMS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE