Accession Number : ADA184758

Title :   Epitaxial Reactor Development for Growth of Silicon-on-Insulator Devices.

Descriptive Note : Final rept. Dec 84-Jun 86,

Corporate Author : CLEMSON UNIV S C DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Dumin,David J

PDF Url : ADA184758

Report Date : Apr 1987

Pagination or Media Count : 90

Abstract : A hydride vapor phase epitaxy system was designed and constructed for testing boron phosphide as the insulator for a silicon on insulator material study. Layer structures grown were tested for electrical properties and thickness. Silicon deposited on the boron phosphide was of good quality, but not as good as bulk silicon. There was some diffusion of boron and phosphorus into the silicon.

Descriptors :   *EPITAXIAL GROWTH, *SEMICONDUCTOR DEVICES, CHEMICAL REACTORS, VAPOR PHASES, HYDRIDES, PHOSPHIDES, BORON COMPOUNDS, LAYERS, THICKNESS, CONTROL, IMPURITIES, DIFFUSION

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE