Accession Number : ADA184822

Title :   Fundamental Studies in the OM-CVD Growth of Ga-In-As-Sb.

Descriptive Note : Final rept. 1 Sep 83-28 Feb 87,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND COMPUTER ENGINEERI NG

Personal Author(s) : Bedair, S M ; Hauser, J R

PDF Url : ADA184822

Report Date : May 1987

Pagination or Media Count : 47

Abstract : We have studied the fundamental OM-CVD growth processes. Several ternary and quaternary alloys have been synthesized and their structural, optical and electrical properties were studied. We have developed Atomic Layer Epitaxy to control the deposition process to the atomic level. Strained layer superlattices have been used as buffer layers to reduce defects originating from GaAs substrates.

Descriptors :   *VAPOR DEPOSITION, GALLIUM ARSENIDES, ALLOYS, OPTICAL PROPERTIES, ELECTRICAL PROPERTIES

Subject Categories : Coatings, Colorants and Finishes

Distribution Statement : APPROVED FOR PUBLIC RELEASE