Accession Number : ADA184976

Title :   Alternatives to Arsine: The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAB

Personal Author(s) : Speckman, Donna M ; Wendt, Jerry P

PDF Url : ADA184976

Report Date : 15 Aug 1987

Pagination or Media Count : 15

Abstract : Studies on the homoepitaxial growth of unintentionally doped GaAs by atmospheric pressure organometallic chemical vapor deposition using triethylarsenic and trimethylgallium have been carried out, and the effects of growth temperature, V/III ratio, and flow rate on film characteristics are reported. Mirror-like epitaxial layers of n-type GaAs were obtained at substrate temperatures of 540-650 C and at V/III ratios of 6.7-11. The carrier concentrations for these films were approximately 10 to the 16th - 10 to the 17th CC, and from secondary ion mass spectroscopic analysis, the predominant epilayer impurities were determined to be both carbon and silicon.

Descriptors :   *EPITAXIAL GROWTH, GALLIUM ARSENIDES, VAPOR DEPOSITION, SILICON

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE