Accession Number : ADA185199

Title :   Equilibrium Analysis of the Preparation of In(x)Ga(1-x)As by the VPE-Hydride Technique; Method to Predict the Composition of the Ternary,

Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY

Personal Author(s) : Quinlan, Kenneth P

PDF Url : ADA185199

Report Date : Nov 1986

Pagination or Media Count : 22

Abstract : The equilibrium of the deposition of InxGa1-xAs in the VPE-hydride technique was analyzed in order to derive a method to predict the composition of the ternary from initial partial pressures. An equilibrium expression is derived where the constant is the product of the equilibrium constants for the deposition of the binaries and the activity of the ternary, InxGa1-xAs, is taken as one. The relationship requires the determination of the equilibrium amounts of InxGa1-As deposited in order to determine the composition. Values for InxGa1-xAs deposited in terms of partial pressure were determined at three arsenic pressures. A linear relationship was observed between the partial pressure of the InxAs1-xAs deposited and the initial concentration of arsenic (PAs). Good agreement is achieved between the compositions calculated by the present method and the experimental values reported in the literature.

Descriptors :   *GALLIUM ARSENIDES, INDIUM COMPOUNDS, VAPOR DEPOSITION

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE