Accession Number : ADA185376

Title :   Resonant Level Lifetime in GaAs/AlGaAs Double-Barrier Structures.

Descriptive Note : Final rept. Feb-Jun 87,

Corporate Author : HARRY DIAMOND LABS ADELPHI MD

Personal Author(s) : Bahder, Thomas B ; Morrison, Clyde A ; Bruno, John D

PDF Url : ADA185376

Report Date : Aug 1987

Pagination or Media Count : 9

Abstract : The lifetime of the lowest quasi-bound state localized between the barriers of a GaAs/AlGaAs double-barrier structure is calculated as a function of barrier and well dimensions. The results are consistent with high-frequency experiments. (Author)

Descriptors :   *GALLIUM ARSENIDES, *TUNNELING, POTENTIAL THEORY, RESONANCE, HIGH FREQUENCY

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE