Accession Number : ADA186520
Title : Resonance Raman Scattering and Fast Time-Resolved Spectroscopy of Impurity Levels in III-V Semiconductor Alloys.
Descriptive Note : Final rept. 1 Mar 80-14 Nov 84,
Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
Personal Author(s) : Wolford, Donald J.
Report Date : 01 AUG 1985
Pagination or Media Count : 248
Abstract : We have performed experimental and theoretical studies of the electronic, vibrational, and kinetic properties of electronic bound states in III-V, and silicon- and germanium-based semiconducting materials. This has included new CVD growth of crystals and thin-films and an advanced program of high-pressure (diamond anvil cell) techniques. Electronic states investigated have included intrinsic and defect-induced levels lying near or within the gap of the host materials. Experiments have involved (1) photoluminescence (PL) (2) PL-excitation (PLE) (3) visible- and infrared-absorption (4) resonant PL and Raman scattering and (5) subnanosecond time-resolved luminescence performed at a variety of temperatures and hydrostatic pressures. Defects were selected for their 'model' properties in a family of hosts and have included isoelectronic deep traps and resonances, shallow and deep simple donors and acceptors, and native-defect and impurity complexes incorporated during crystal growth or by implantation and annealing or diffusion. Keywords: Impurities, Deep levels, Isoelectronic traps, Shallow levels, Alloys, Amorphous semiconductors, Photoluminescence.
Descriptors : *ALLOYS, *AMORPHOUS MATERIALS, *CRYSTALS, *SEMICONDUCTORS, ANNEALING, CRYSTAL GROWTH, DONORS(MEDICINE), ELECTRON ACCEPTORS, ELECTRONIC STATES, EXPERIMENTAL DATA, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, GROWTH(GENERAL), HIGH PRESSURE, HYDROSTATIC PRESSURE, IMPURITIES, KINETICS, LEVEL(QUANTITY), LIGHT SCATTERING, LUMINESCENCE, MATERIALS, MODELS, PHOTOLUMINESCENCE, RAMAN SPECTRA, RESONANCE SCATTERING, SHALLOW DEPTH, SILICON, SPECTROSCOPY, THEORY, TIME.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE