Accession Number : ADA186723
Title : Growth of HgZnTe Layers by LPE Technique.
Descriptive Note : Rept. no. 4, 1 Feb-1 Aug 87,
Corporate Author : ISRAEL ATOMIC ENERGY COMMISSION YAVNE SOREQ NUCLEAR RESEARCH CENTRE
Personal Author(s) : Sher, Ariel
PDF Url : ADA186723
Report Date : 01 Aug 1987
Pagination or Media Count : 3
Abstract : The goal of this project is to evaluate the LPE growth technique as a tool for preparing Hg1-xZnxTe suitable for photodetectors. In the first year of this project optimization of the growth conditions was done. The objective for the second year is to study the parameters which determine the transport electrical properties of the Hg1-xZnTe epilayers. In this interim report we report the first results of annealing experiments on the epilayers and compare the characteristics of the annealed epilayers with those of the as grown . The as grown epilayers of Hg1-xZnxTe, 0.15 or = x or =0.24, exhibit p type conductivity with carrier concentration of the order 1x10 to the 17th power/cm3. In order to decrease the carrier concentration down to the level of 1x10 to the 16th power, the optimum carrier concentration for photodetectors, the epilayers were annealed in Hg atmosphere. The conditions of the annealing were similar to those which are generally used for the annealing of Hg1-xCdxTe, namely, temperature of the sample around 400 C for several hours. Keywords: Mercury compounds, Cadmium tellurides.
Descriptors : *ANNEALING, *CADMIUM TELLURIDES, *GROWTH(GENERAL), *MERCURY COMPOUNDS, *PHOTODETECTORS, *CHARGE CARRIERS, LAYERS, ENVIRONMENTS, EXPERIMENTAL DATA, ELECTRICAL PROPERTIES, OPTIMIZATION
Subject Categories : Crystallography
Solid State Physics
Optical Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE