Accession Number : ADA186726

Title :   Radiant Power Degradation of Silicon-Doped Gallium Arsenide and Gallium Aluminum Arsenide Infrared Light-Emitting Diodes.

Descriptive Note : Master's thesis,

Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH

Personal Author(s) : Resimont, William N

PDF Url : ADA186726

Report Date : May 1987

Pagination or Media Count : 75

Abstract : This work investigates the use of the capacitance-voltage (C-V), current -voltage (I-V), and radiant power-current-voltage (P-I-V) diode characteristics as a means of modeling the general radiant power degradation of silicon-doped gallium arsenide and gallium aluminum arsenide (GaAs:Si, GaA1As:Si) IREDs. The procedure consists of measuring the initial characteristics, stressing with various operating current densities at room temperature, then periodically repeating the measurements. Control diodes that are not stressed are tested to determine the precision of the measuring apparatus and the normal variations in diode behavior.

Descriptors :   *DIODES, *GALLIUM ARSENIDES, *SILICON, CONTROL, VOLTAGE, DEGRADATION, POWER, RADIATION, DOPING, DENSITY, BEHAVIOR, GALLIUM, ROOM TEMPERATURE, THESES

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE