Accession Number : ADA186816
Title : A Report on the Effects of Neutron Irradiation of GaAs Semiconductors.
Descriptive Note : Master's thesis,
Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Personal Author(s) : Callahan, John K
PDF Url : ADA186816
Report Date : Jun 1987
Pagination or Media Count : 43
Abstract : The effects of neutron irradiation in GaAs MMICs and small signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping, and channel depth. The individual components of the MMICs were also measured. Device degradation was determined to be the result of a combination of decreases in carrier concentration and mobility in the FETs. Radiation hardness levels based on 20% degradation in gain and drain current were determined. Keywords include: GaAs MMICs, Carrier concentration, Mobility.
Descriptors : *NEUTRON IRRADIATION, *FIELD EFFECT TRANSISTORS, *INTEGRATED CIRCUITS, CARRIER MOBILITY, CHARGE DENSITY, GALLIUM ARSENIDES, RADIATION HARDENING, MICROWAVE EQUIPMENT, MONOLITHIC STRUCTURES(ELECTRONICS)
Subject Categories : Solid State Physics
Radioactiv, Radioactive Wastes & Fission Prod
Distribution Statement : APPROVED FOR PUBLIC RELEASE