Accession Number : ADA186956
Title : Superlattice Photodetectors.
Descriptive Note : Final technical rept. Jul 83-May 85,
Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELO PMENT CENTER
Personal Author(s) : Zehr, Stanley W
PDF Url : ADA186956
Report Date : Aug 1987
Pagination or Media Count : 56
Abstract : The technical progress in Phase 1 of this two-phase program aimed at developed of low noise, high sensitivity superlattice avalanche photodiodes is reported. The initial focus of the Phase 1 effort was development of metalorganic chemical vapor deposition (MOCVD) technology for the growth of high quality GaAs/A1GaAs superlattice structures. Using the developed growth technology, two series of GaAs/A1GaAs structures were evaluated with regard to dark current, breakdown voltage, and dark and illuminated gain characteristics to study effects of variations in critical growth and structural parameters. The results will be used to guide development of a predictive performance model for this class of devices during Phase 2 of the program. The model will then be applied to optimizing design of low noise, high sensitivity InGaAs/InP APD's operating in the low loss 1.0 to 1.6 micrometers wavelength range. Such devices will be grown by MOCVD and their performance evaluated during Phase 2 of the program.
Descriptors : *CRYSTAL LATTICES, *PHOTODETECTORS, CHEMICAL REACTIONS, DARKNESS, GAIN, GROWTH(GENERAL), HIGH SENSITIVITY, ILLUMINATION, LOW NOISE, ORGANOMETALLIC COMPOUNDS, PARAMETERS, STRUCTURAL PROPERTIES, VAPOR DEPOSITION
Subject Categories : Optical Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE