Accession Number : ADA187216

Title :   Theoretical Studies of the Interface Electronic Properties of Tetrahedrally Coordinated Semiconductors.

Descriptive Note : Final rept. 1 Jun 77-31 Dec 85,

Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE

Personal Author(s) : Madhukar, Anupam

PDF Url : ADA187216

Report Date : 29 Sep 1987

Pagination or Media Count : 51

Abstract : The work covers the following subject areas; (i) Electronic Structure of Superlattices; (ii) Electronic transport, magnetotransport, and magneto optical properties of quasi two dimensionally (2D) confined single particle states and charge carriers; (iii) Collective properties of 2D electrons and holes; (iv) Point Defect Inducted Deep levels in bulk compound semiconductors and superlattices; (v) The nature of Si/SiO2 system and the role of interface disorder; (vi) Semiconductor/ Metal Systems, including the Si/Silicide interface; (vii) Spectroscopic Ellipsometry Studies; (viii) Nitridation Kinetics of SiO2 on Si(100); (ix) Computer Simulations of molecular beam epitaxial growth of compound semiconductors and the atomistic nature of interfaces. Keywords: Electronic structure of superlattices, Transport, Magneto-transport and Magneto optical properties, Deep levels, The Si/SiO2 Interface, Silicon; Silicide interfaces.

Descriptors :   *ELLIPSOMETERS, *EPITAXIAL GROWTH, *NITRIDES, *POINT DEFECTS, *SEMICONDUCTORS, *SILICIDES, *SILICON, COMPUTERIZED SIMULATION, ELECTRON TRANSPORT, ELECTRONICS, INTERFACES, KINETICS, METALS, MOLECULAR BEAMS, ORDER DISORDER TRANSFORMATIONS, SPECTROSCOPY, SURFACE PROPERTIES, THEORY

Subject Categories : Solid State Physics
      Crystallography
      Test Facilities, Equipment and Methods

Distribution Statement : APPROVED FOR PUBLIC RELEASE