Accession Number : ADA187335

Title :   Synthesis and Characterization of Thin Films.

Descriptive Note : Final rept. 1 Sep 84-30 Nov 86,

Corporate Author : IOWA STATE UNIV AMES MICROELECTRONICS RESEARCH CENTER

Personal Author(s) : Lakin, K M

PDF Url : ADA187335

Report Date : 10 Jul 1987

Pagination or Media Count : 371

Abstract : This report summarizes a program which involved the installation of the individual systems of a major thin film facility and the results of initial film growth studies using the facility. Work in the growth of aluminum and germanium on silicon, germanium on gallium arsenide, and lithium niobate on silicon and sapphire is reported. Keywords: Thin films, Depositions, Ionized cluster beam deposition; LiNbO3 films, Ellipsometry.

Descriptors :   *DEPOSITION, *THIN FILMS, *VACUUM DEPOSITION, FILMS, GROWTH(GENERAL), GERMANIUM, SILICON, CLUSTERING, IONIZATION, SAPPHIRE, THESES, ELLIPSOMETERS, GALLIUM ARSENIDES, ALUMINUM, LITHIUM NIOBATES, SYNTHESIS, SPUTTERING, AUGER ELECTRON SPECTROSCOPY, ULTRAHIGH VACUUM, ELECTRON DIFFRACTION

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE