Accession Number : ADA187335
Title : Synthesis and Characterization of Thin Films.
Descriptive Note : Final rept. 1 Sep 84-30 Nov 86,
Corporate Author : IOWA STATE UNIV AMES MICROELECTRONICS RESEARCH CENTER
Personal Author(s) : Lakin, K M
PDF Url : ADA187335
Report Date : 10 Jul 1987
Pagination or Media Count : 371
Abstract : This report summarizes a program which involved the installation of the individual systems of a major thin film facility and the results of initial film growth studies using the facility. Work in the growth of aluminum and germanium on silicon, germanium on gallium arsenide, and lithium niobate on silicon and sapphire is reported. Keywords: Thin films, Depositions, Ionized cluster beam deposition; LiNbO3 films, Ellipsometry.
Descriptors : *DEPOSITION, *THIN FILMS, *VACUUM DEPOSITION, FILMS, GROWTH(GENERAL), GERMANIUM, SILICON, CLUSTERING, IONIZATION, SAPPHIRE, THESES, ELLIPSOMETERS, GALLIUM ARSENIDES, ALUMINUM, LITHIUM NIOBATES, SYNTHESIS, SPUTTERING, AUGER ELECTRON SPECTROSCOPY, ULTRAHIGH VACUUM, ELECTRON DIFFRACTION
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE