Accession Number : ADA187348

Title :   Resonant Landau Level-Optical Phonon Interaction in Two-Dimensionally Confined Charge Carrier Systems,

Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF PHYSICS

Personal Author(s) : Madhukar, Anupam

PDF Url : ADA187348

Report Date : Jan 1979

Pagination or Media Count : 15

Abstract : The study of the phenomenon of resonant coupling of Landau level with the longitudinal optical phonon in a bulk semiconductor received considerable impetus with the observation of the anomalous magneto-optical interband absorption behavior of InSb, reported a little over a decade ago. Subsequent studies clarified various aspects of this phenomenon as it affects impurity absorption, cyclotron resonance and combined resonance. A systematic theoretical study of the phenomenon in free carrier systems has led to a classification of the relative importance of self-energy and electron-light vertex corrections. In this paper I shall discuss certain aspects of this phenomenon in the context of the new and novel two-dimensionally confined charge carrier systems that can be made to occur in semiconductor quantum wells, superlattices, heterojunctions, and the metal-oxide-semiconductor systems. The fabrication and study of these systems within the recent past have opened a rather unique opportunity for the exploration of new phenomena arising from the reduced dimensionality, as well as from the special conditions that can be realized in these systems. In addition, new ramifications of established phenomena can be fruitfully employed to gain information regarding fundamental interactions unique to the system. Keywords: Reprints; Gallium arsenide; Aluminum; Indium.

Descriptors :   *BULK SEMICONDUCTORS, *OPTICAL PROPERTIES, *PHONONS, ALUMINUM, GALLIUM ARSENIDES, INDIUM, REPRINTS, QUANTUM ELECTRONICS, SEMICONDUCTORS, ABSORPTION, IMPURITIES, COUPLING(INTERACTION), RESONANCE

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE