Accession Number : ADA187416
Title : MBE (Molecular Beam Epitaxial) Growth Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices.
Descriptive Note : Quarterly rept,
Corporate Author : CHICAGO UNIV ILL DEPT OF PHYSICS
Personal Author(s) : Faurie, Jean-Pierre
PDF Url : ADA187416
Report Date : 15 Jun 1987
Pagination or Media Count : 24
Abstract : As the MBE growth technique has continued to improve for Hg(1-x)Cd(x)Te films, the prospects for films of larger area have begun to be explored. These larger area films are important for imaging arrays and will be especially vital in the future for the efficient production of Hg(1-x)Cd(x)Te material. The growth of MBE of uniform Hg(1-x)Cd(x)Te epilayer on a large substrate is very difficult to achieve because of the non-uniform distribution of the fluxes and on the non-uniform temperature of the substrate. Keywords: Molecular Beam Epitaxial(MBE); Mercury; Cadmium; Tellurium.
Descriptors : *ELECTRONIC EQUIPMENT, *MERCURY, *MOLECULAR BEAMS, *MERCURY COMPOUNDS, *CADMIUM TELLURIDES, ARRAYS, CADMIUM, DISTRIBUTION, EFFICIENCY, FILMS, IMAGES, NONUNIFORM, PROCESSING, PRODUCTION, SUBSTRATES, TELLURIUM, TEMPERATURE
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE