Accession Number : ADA187428

Title :   High Pressure Electronic Transport in Semiconductors.

Descriptive Note : Final rept.,

Corporate Author : COLORADO STATE UNIV FORT COLLINS

Personal Author(s) : Spain, Ian L ; Sites, James R

PDF Url : ADA187428

Report Date : Sep 1987

Pagination or Media Count : 12

Abstract : Research has resulted in (1) developing galvanomagnetic measurements in the diamond anvil and/or sapphire anvil cells to pressure of about 10 gPa, (2) Performing electrical resistivity, magnetoresistance, Hall effect, and Shubnikov-de Haas measurements on bulk samples of GaAs and InP, and (3) Carrying out I-V and C-V measurements on Schottky diodes of GaAs and InP and MIS Structures. Keywords include: Semiconductors, Electronic transport, High pressure electronic transport, Electrical resistivity, and Photoluminescence.

Descriptors :   *ELECTRON TRANSPORT, *GALLIUM ARSENIDES, *HALL EFFECT, *MAGNETORESISTANCE, *PHOTOLUMINESCENCE, *SCHOTTKY BARRIER DEVICES, *SEMICONDUCTORS, DIODES, ELECTRICAL RESISTANCE, HIGH PRESSURE, MEASUREMENT, SAMPLING

Subject Categories : Solid State Physics
      Electricity and Magnetism
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE