Accession Number : ADA187456

Title :   MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices.

Descriptive Note : Quarterly rept.,

Corporate Author : ILLINOIS UNIV AT CHICAGO CIRCLE DEPT OF PHYSICS

Personal Author(s) : Faurie, Jean-Pierre

PDF Url : ADA187456

Report Date : 15 Mar 1987

Pagination or Media Count : 23

Abstract : Results obtained for MBE grown N & P-type layers in terms of carrier concentration and electron or hole mobilities. Most layers grown after the start date of the current contract. It is important to point out that even if these results are the best ever obtained in the laboratory they are representative of our level of control concerning the growth. Numerous layers with the same composition exhibit very similar results. A new Hg cell, which is a prototype built by ISA - Riber is currently being tested in the laboratory. This cell that we have conceived gives a very stable Hg flux during hours of growth. It should be noted that both mobility and carrier concentration values are suitable for IR device application. Keywords: Mercury compounds, Cadmium Tellurides.

Descriptors :   *TELLURIDES, *ELECTRONIC EQUIPMENT, *CHARGE CARRIERS, ELECTRONS, GROWTH(GENERAL), CONTRACTS, PROCESSING, CONTROL

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE