Accession Number : ADA187553

Title :   Microscopic Control of Metallization Stability.

Descriptive Note : Interim rept. 1 Aug 86-31 Aug 87,

Corporate Author : MINNESOTA UNIV MINNEAPOLIS

Personal Author(s) : Chang, S ; Philip, P ; Caprile, C ; Wall, A ; Franciosi, A

PDF Url : ADA187553

Report Date : 23 Oct 1987

Pagination or Media Count : 7

Abstract : Metallization stability on semiconductor surfaces depends on atomic interdiffusion at two interfaces, namely the semiconductor metal junction and the overlayer atmosphere interface. Recent progress in controlling the stability of these interfaces derived from the use of powerful nondestructive analytical tools of local interface composition. We summarize here synchrotron radiation photoemission studies of metallic overlayers on Si(111) and GaAs(110) surfaces. We focus on the use of diffusion barriers to control atomic interdiffusion, and on the effect of oxidizing atmospheres on metal and semiconductor composition.

Descriptors :   *INTERFACES, *METALLIZING, *SEMICONDUCTORS, *MICROSCOPY, ATMOSPHERES, STABILITY, METALS, OXIDATION, SURFACES, BARRIERS, DIFFUSION, CONTROL, RADIATION, SYNCHROTRONS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE