Accession Number : ADA187644
Title : Laser Measurements of State-Resolved Ga and In Atom Sticking and Desorption on Metal and Semiconductor Surfaces.
Descriptive Note : Annual rept. 1 Dec 86-30 Nov 87,
Corporate Author : COLORADO UNIV AT BOULDER
Personal Author(s) : Leone, Stephen R
PDF Url : ADA187644
Report Date : 01 Dec 1987
Pagination or Media Count : 9
Abstract : Work is carried out on the dynamics of Ga and As scattering, sticking, and desorption from silicon single crystals using laser probing of the Ga and As (dimer) gas phase species. In the last six months, results have been obtained for the binding energy of Ga om silicon. Structural patterns of Ga on silicon at various coverages have been determined by LEED studies. Results have been obtained for the desorption of two different Ga spin-orbit states and a model developed to explain the observed behavior. The desorption pre-exponential factors suggest a one-dimensional mobility of Ga on silicon. These results are relevant to the epitaxial growth of GaAs on silicon. Keywords: Semiconductors, Surfaces, Lasers, Gallium arsenides.
Descriptors : *EPITAXIAL GROWTH, *GALLIUM ARSENIDES, *LASERS, *SEMICONDUCTORS, *SILICON, *SINGLE CRYSTALS, ATOMS, DESORPTION, DYNAMICS, GALLIUM, METALS, MOBILITY, NUCLEAR BINDING ENERGY, ONE DIMENSIONAL, ORBITS, SCATTERING, SPIN STATES, SURFACES, VAPOR PHASES
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE