Accession Number : ADA187883

Title :   Development of VLSI Optical Data Link.

Descriptive Note : Quarterly status rept. nos. 1 and 2, 1 Sep 86-28 Feb 87,

Corporate Author : WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA

Personal Author(s) : McMullin, P G ; Messham, R L

PDF Url : ADA187883

Report Date : 16 Sep 1987

Pagination or Media Count : 39

Abstract : The deposition of GaAs epilayers onto the silicon epilayer of an SOS wafer has proven to be a relatively robust process, insensitive to variations in substrate orientation, cleaning, preconditioning, growth rate and temperature, and composition of the deposited layer. Deposition onto sapphire substrates has not yet given GaAs epilayers of high quality. The best approach for obtaining device-quality GaAs appears to be through utilization of the silicon epilayer as the base for the GaAs deposition. Experiments will be carried out to improve the quality of GaAs layers deposited directly onto sapphire. Keywords: Heteroepitaxy; Epitaxial crystal growth; Crystal growth; Gallium arsenide; Silicon; Silicon on Sapphire; VLSI; VHSIC; Optoelectronic; Electrooptical; Fiber optics.

Descriptors :   *CRYSTAL GROWTH, *DATA LINKS, *EPITAXIAL GROWTH, *FIBER OPTICS, *GALLIUM ARSENIDES, *OPTICAL COMMUNICATIONS, *SAPPHIRE, *SILICON, DEPOSITION, GROWTH(GENERAL), LAYERS, OPTICAL DATA, ORIENTATION(DIRECTION), QUALITY, RATES, SUBSTRATES

Subject Categories : Command, Control and Communications Systems
      Optics
      Solid State Physics
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE