Accession Number : ADA187884

Title :   Development of VLSI Optical Data Link.

Descriptive Note : Quarterly status rept. no. 3, 1 Mar-30 May 87,

Corporate Author : WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA

Personal Author(s) : McMullin, P G ; Messham, R L

PDF Url : ADA187884

Report Date : 01 Oct 1987

Pagination or Media Count : 13

Abstract : This report covers a sequence of epitaxial growth runs on sapphire substrates. The gallium arsenide films resulting do not have as good a surface morphology as the films previously grown on silicon-on-sapphire substrates. However, the films are highly oriented with respect to the substrate and controllable to obtain 111 or 100 orientation. Further optimization of deposition on sapphire substrates will be continued while the main thrust of the program will be directed to the formation of devices fabricated in gallium arsenide layers deposited onto the silicon epilayer of SOS substrates for evaluation purposes. Keywords include: Heteroepitaxy; Epitaxial crystal growth; Crystal growth; Gallium arsenide; Silicon; Silicon on Sapphire; VLSI; VHSIC; Optoelectronic; Electrooptical; and Fiber optics.

Descriptors :   *DATA LINKS, *FIBER OPTICS, *GALLIUM ARSENIDES, *OPTICAL COMMUNICATIONS, *OPTICAL DATA, *SAPPHIRE, *SILICON, CRYSTAL GROWTH, DEPOSITION, EPITAXIAL GROWTH, FILMS, LAYERS, OPTIMIZATION, SUBSTRATES

Subject Categories : Command, Control and Communications Systems
      Electrical and Electronic Equipment
      Optics
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE