Accession Number : ADA188001

Title :   Deposition of Device Quality Epitaxial Layers of Gallium Nitride and Indium Nitride for Electronic Applications.

Descriptive Note : Annual letter rept. 21 May 86-1 Oct 87.

Corporate Author : ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB

PDF Url : ADA188001

Report Date : 09 Oct 1987

Pagination or Media Count : 8

Abstract : The major activity scheduled for the first year of the program was the design and construction of a suitable ultra-high vacuum deposition apparatus and the initiation of shakedown experiments. The apparatus has essentially been completed and shakedown experiments are beginning. The apparatus design and the experimental plan for the shakedown experiments are described in this report.

Descriptors :   *ELECTRONICS, *EPITAXIAL GROWTH, *GALLIUM COMPOUNDS, *INDIUM, *NITRIDES, DEPOSITION, LAYERS, PLANNING, QUALITY, ULTRAHIGH VACUUM, VACUUM APPARATUS, VACUUM DEPOSITION

Subject Categories : Inorganic Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE