Accession Number : ADA188093
Title : Plasma Deposition of Silicon Carbide Thin Films.
Descriptive Note : Final rept. 1 Jul 84-31 Jul 87,
Corporate Author : WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
Personal Author(s) : Partlow, W D ; Choyke, W J ; Yates, John T , Jr ; Kline, L E ; Bozack, M J
PDF Url : ADA188093
Report Date : 20 Aug 1987
Pagination or Media Count : 81
Abstract : This report summarizes the work performed on a three year program to obtain an understanding of deposition processes of thin films from plasmas. Deposition plasmas of methane and of methane-hydrogen and methane-silane mixtures were characterized via electrical, optical, and mass spectroscopic measurements. Surface chemical studies of the fundamental surface reactions were performed, and a model was constructed which takes into account both gas phase and the surface processes leading to deposition. The properties of the deposited films were related to the plasma conditions associated with their deposition. Advances in process modeling and surface chemical techniques were achieved on this program, in addition to the knowledge that was gained about the specific plasma deposition processes that were studied.
Descriptors : *PLASMAS(PHYSICS), *SILICON CARBIDES, *THIN FILMS, *VAPOR DEPOSITION, CHEMICAL ENGINEERING, CHEMISTRY, DEPOSITION, FILMS, MASS SPECTROSCOPY, METHANE, SURFACE CHEMISTRY, SURFACE REACTIONS, SURFACES, VAPOR PHASES, THERMOCHEMISTRY, CHEMICAL BONDS, CRYSTALLOGRAPHY, MOLECULAR BEAMS, SILANES, AMORPHOUS MATERIALS, MODELS, HYDROGENATION
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE