Accession Number : ADA188283

Title :   Study of Quantum Mechanical Effects in Deep Submicron, Grating-Gate Field Effect Transistors.

Descriptive Note : Annual rept. 30 Sep 86-29 Sep 87,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s) : Antoniadis, Dimitri A ; Smith, Henry I

PDF Url : ADA188283

Report Date : 29 Oct 1987

Pagination or Media Count : 8

Abstract : This research program investigates the effect of extreme submicron spatial modulation of the electrostatic potential on the transport in a two-dimensional electron gas (2DEG) in silicon and in III-V compound semiconductor devices. The test vehicle is the so-called grating-gate FET (GGFET). When made to move in a direction perpendicular to the grating gate, electrons experience a surface superlattice (SSL) effect. When moving along the potential modulation electrons are restricted to only one degree of freedom, and thus constitute a quasi-one-dimensional (Q1D) system. Our major achievements in the past year include: In silicon we have fabricated, with high yield, grating gate transistors and measured their current voltage characteristics at liquid helium temperatures. The device mobility at 4 K is about 15000 sq cm/Vs, possibly the highest reported for MOSFETs fabricated using e-beam or x-ray lithographies. Keywords: Surface superlattice, X ray lithography, Deep UV lithography.

Descriptors :   *CRYSTAL LATTICES, *GATES(CIRCUITS), *GROUP III COMPOUNDS, *GROUP V COMPOUNDS, *LITHOGRAPHY, *MOSFET SEMICONDUCTORS, *SILICON, *TRANSISTORS, ELECTRON GAS, ELECTRONS, ELECTROSTATICS, GRATINGS(SPECTRA), HIGH RATE, LIQUID HELIUM, MODULATION, QUANTUM THEORY, SEMICONDUCTOR DEVICES, SPATIAL DISTRIBUTION, SURFACES, TEMPERATURE, TEST VEHICLES, TWO DIMENSIONAL, ULTRAVIOLET RADIATION, VOLTAGE, X RAYS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Mfg & Industrial Eng & Control of Product Sys
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE