Accession Number : ADA188635
Title : Electronic Properties of Semiconductor Inversion Layers in Sub-Micron Structures.
Descriptive Note : Final rept. 16 Jul 84-30 Jun 87,
Corporate Author : BROWN UNIV PROVIDENCE RI
Personal Author(s) : Stiles, P J
PDF Url : ADA188635
Report Date : 15 Oct 1987
Pagination or Media Count : 5
Abstract : A summary report of research conducted under contract DAAG29-84-K-0139 is given. This project is still in the construction phase therefore, no research results are reported. Recent results on alternate lithography techniques are shown. The original proposal contained a research program for the fabrication and study of ultra-sub-micron structures. The centerpiece of this effort was the construction of an e-beam pattern generator capable of ultra-sub-micron resolution lithography. Our original plan was to modify an existing SEM column for this purpose, however, by the time ARO funding actually began a different approach was adopted and we decided to build a separate system based on new Amray 100B SEM column. We severely underestimated the time, manpower, and staging requirements for this project. During the past year we have continued to pursue the other avenue of sub-micron pattern generation described in our original research proposal but which were deemphasized with the award of the ARO contract. We have designed and built our own RIE system with several unique features for etching sub-micron patterns. Using this system, we are again studying other lithographic techniques to be used in conjunction with e-beam lithography.
Descriptors : *ELECTRON BEAMS, *LITHOGRAPHY, *INTEGRATED CIRCUITS, *FABRICATION, CONSTRUCTION, ELECTRONICS, ETCHING, INVERSION, LAYERS, MANPOWER, PATTERN MAKING, PATTERNS, REQUIREMENTS, SEMICONDUCTORS, STAGING, STRUCTURES
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE