Accession Number : ADA188666
Title : Silicon Containing Photoresists.
Descriptive Note : Technical rept.,
Corporate Author : IBM ALMADEN RESEARCH CENTER SAN JOSE CA
Personal Author(s) : Miller, R D
PDF Url : ADA188666
Report Date : 13 Nov 1987
Pagination or Media Count : 25
Abstract : The problems created by the generation of small features over topography has focussed attention on multilayer techniques in spite of the added processing complexities. Particularly attractive in this regard are those processes employing oxygen reactive ion etching (02-RIE) for image transfer because of the intrinsically anisotropic nature of the transfer process. This technique requires polymeric materials which are stable to 02-RIE conditions. This requirement has stimulated the development of organometallic resists particularly those containing silicon which produce etch resistant refractory oxides in the oxygen plasma environment. Recent advances in the development of silicon containing resists for multilayer applications are reviewed.
Descriptors : *ETCHING, *ION BEAMS, *OXYGEN, *PLASMAS(PHYSICS), *POLYMERS, *SILICON, *PHOTORESISTORS, *ORGANOMETALLIC COMPOUNDS, IMAGES, LAYERS, MATERIALS, OXIDES, REACTIVITIES, REFRACTORY MATERIALS, RESISTANCE, TOPOGRAPHY, TRANSFER
Subject Categories : Polymer Chemistry
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE